| PART |
Description |
Maker |
| MMFT2406T1G MMFT2406T3 MMFT2406T3G MMFT2406T1 |
Power MOSFET 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 700 mA, 240 Volts
|
ONSEMI[ON Semiconductor]
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| P015 |
65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SUPERTEX INC
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| AG-320240D |
320 x 240 dots 1/240 Duty
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| VN2406L-D |
Small Signal MOSFET 200 mAmps, 240 Volts N-Channel TO-92
|
ON Semiconductor
|
| BSP87E-6327 |
290 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET SMD, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| CM150TU-12F |
240 x 128 pixel format, CFL Backlight with power harness
HIGH POWER SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM200TU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, CFL Backlight with power harness
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
