| PART |
Description |
Maker |
| Q62702-B824 BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
http://
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BBY26-S1 BBY24 Q62702-B23-S2 BBY24-BBY27 BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) 硅调谐变容二极管（突变结调谐二极管调谐范20伏）
1 UF 10% 25V X7R (1206) CHIP CAP TR
RESISTOR, 1% SMT 0603
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
| MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| KDV269 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC Holdings
KEC(Korea Electronics)
|
| KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
| SVC333 |
Diffused Junction Type Silicon Diode Varactor Diode (IOCAP) for AM Receiver Electronic Tuning
|
Sanyo
|
