PART |
Description |
Maker |
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
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General Electric Solid State GE Solid State
|
T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 |
RF Power Field Effect Transistors
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Freescale Semiconductor, Inc Freescale Semiconductor...
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MTM40N20 |
Power Field Effect Transistor
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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MRF6S21100NR1 MRF6S21100NBR1 |
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FREESCALE[Freescale Semiconductor, Inc]
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MRF8S19140HR3 MRF8S19140HSR3 |
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|
Freescale Semiconductor
|
MRF8S19260HR6 MRF8S19260HSR6 |
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|
Freescale Semiconductor, Inc
|
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 |
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|
Freescale Semiconductor, Inc
|
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
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|
Freescale Semiconductor, Inc
|
MRF187 MRF187R3 MRF187SR3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 |
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|
Freescale (Motorola)
|