PART |
Description |
Maker |
IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset RELAY 024VDC 01A DPDT-XX FORM:2C UC Bi-Lobe Standard Metal Shell Nano Offset Connector Low Power 5V/3.0V P Reset Low Power/ 5V/ P Reset Low Power, 5V, 楼矛P Reset Low Power 5V P Reset Low Power, 5V, P Reset Low Power, 5V, μP Reset 4.375V power reset
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IMP INC. IMP Inc IMP[IMP, Inc] IMP[IMP Inc]
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AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
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International Rectifier List of Unclassifed Man...
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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TDA16846 TDA16847 TDA1684603 TDA16846-2 TDA16847-2 |
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor
|
Infineon Technologies AG
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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GSM11 |
Low Power Medical Power Supplies 11 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
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IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. Vishay Intertechnology, Inc.
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U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV Evaluation board using 1x SD3932 for HF transmitters VIPer12A travel adaptor 3.6W output Analog IC 模拟IC RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC RF power amplifier using 1 x PD55008L 模拟IC
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Electronic Theatre Controls, Inc. KEMET Corporation Bourns, Inc. MITSUMI ELECTRIC CO., LTD.
|
2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1254 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SC3942 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
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