| PART |
Description |
Maker |
| HRF3205S HRF3205 FN4447 |
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HUF75344S3S HUF75344G3 HUF75344P3 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FDP3205 |
N-Channel PowerTrench? MOSFET 55V, 100A, 7.5mΩ
N-Channel PowerTrench㈢ MOSFET 55V, 100A, 7.5mヘ
|
Fairchild Semiconductor
|
| HUFA75332S3S HUFA75332G3 HUFA75332P3 HUFA75332S3ST |
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| HRF3205ST HRF3205L |
100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
HARRIS SEMICONDUCTOR
|
| HUF75337S3S HUF75337P3 HUF75337G3 FN4369 |
75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N沟道UltraFET功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| HUF75329G3 HUF75329S3S HUF75329P3 |
49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs(49A, 55V, 0.024Ω, N沟道UltraFET功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| HUF75332S3S HUF75332G3 HUF75332P3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| IRLU3705ZPBF IRLR3705ZPBF IRLR3705ZPBF-15 |
42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Advanced Process Technology
|
International Rectifier
|
|
