PART |
Description |
Maker |
MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode From old datasheet system
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NXP Semiconductors Philipss
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BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
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HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
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Renesas Electronics Corporation
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RKV5000DKK |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner Vari-Cap Diodes for Electric Tuning
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RENESAS[Renesas Electronics Corporation] http://
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HVU363B |
Diodes>Variable Capacitance Variable Capacitance Diode for TV tuner
|
Renesas Electronics Corporation
|
HVU316 |
Diodes>Variable Capacitance Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
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1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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ADVANCED SEMICONDUCTOR INC
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1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
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Toshiba Corporation Toshiba Semiconductor
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1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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MICROSEMI CORP-LOWELL
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