| PART |
Description |
Maker |
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| BRF610 BRF61002 BRF61092 BRF61002J BRF61014 BRF610 |
NPN low noise silicon microwave transistor.
|
BOPOLARICS
ETC[ETC]
List of Unclassifed Manufacturers
|
| B12V114B |
NPN low noise silicon microwave transistor
|
BOPOLARICS
|
| BRF630 |
NPN Low Noise Silicon Microwave Transistor
|
Bipolarics
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| 2SC2148 2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC[NEC]
NEC, Corp.
|
| MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
| 5962-9093003MXX 5962-9093002M3X 5962-9093002MXX 59 |
Pin-Programmable Universal and Bandpass Filters
DC-to-Microwave, 5V Low-Noise Amplifier x8存储
|
Optoway Technology, Inc.
|
| 2SC4094-15 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
Renesas Electronics Corporation
|
