| PART |
Description |
Maker |
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| MMBT1815L-GR-AN3-R MMBT1815-GR-AN3-R MMBT1815-GR-A |
HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2N4400 BT4400 |
NPN General Purpose Amplifier 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN General Purpose Amplifier(NPN????ㄦ?澶у?
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 2N2060A |
Dual Amplifier Transistor（Small Signal Dual Transistor in a TO-77 Hermetic Package具有放大器功能的双晶体管（TO-77封装两个小信号晶体管 双放大器晶体管（双小信号晶体管采用TO - 77气密封装）（具有放大器功能的双晶体管（至77封装两个小信号晶体管））
DUAL AMPLIFIER TRANSISTOR 500 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF
|
Central Semiconductor, Corp.
TT electronics Semelab, Ltd.
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ENA1108 15GN03MA |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Sanyo Semicon Device
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| 2SC1815-X-T92-B 2SC1815-X-T92-K 2SC1815 2SC1815G-X |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
