| PART |
Description |
Maker |
| KM23C16000CET |
16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位（2Mx8 / 1Mx16）的CMOS掩模ROM,600位（2Mx8 / 1Mx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| MX26LV160ATXBC-70G MX26LV160ABXBC-70G MX26LV160ABX |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 55 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 55 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
http://
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX26LV160BXBC-70G MX26LV160TXBC-70G MX26LV160BXBC- |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 55 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| LY62L102616ALL-55SL |
16M Bits ( 2Mx8 / 1Mx16 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A82DL16X2T A82DL1622 A82DL1622TG-70 A82DL1622TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
|
AMICC[AMIC Technology]
|
| BS616LV1611 BS616LV1611FIP70 BS616LV1611FC BS616LV |
Asynchronous 16M(1Mx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| AT49F1614 AT49F1604T-70CI AT49F1604T-70CC |
x16 Flash EEPROM
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,BGA,48PIN,PLASTIC
|
Atmel
|
| A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL16x2T（ü）16兆位Mx8 Bit/1Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
