| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF998R BF998 BF998/T1 |
TRANSISTOR MOSFET
Silicon N-channel dual-gate
|
Philips
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| 3SK22507 3SK225 |
Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
|
Toshiba Semiconductor
|
| 3SK249 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| IN74AC20N IN74AC20 IN74AC20D |
DUAL 4-INPUT NAND GATE High-Speed Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| KK4002B |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
