| PART |
Description |
Maker |
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| TSHF5400 |
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
High Speed IR Emitting Diode in 庐5 mm (T-13/4) Package
High Speed IR Emitting Diode in ? 5 mm (T?1 4/5)Package
From old datasheet system
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
|
http://
VISAY[Vishay Siliconix]
|
| TSFF5400 |
High Speed IR Emitting Diode in ? mm (T-13/4) Package
From old datasheet system
High Speed IR Emitting Diode in ? 5 mm (T?1 3/4)Package
|
Vishay Siliconix
|
| RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS)
DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
|
ToshibaSemiconductor
Toshiba Semiconductor
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
| DCA010 |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Very High-Speed Switching Diode
From old datasheet system
|
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RD0306LS-SB |
3 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| HV200F06 HV200F062CL2FE |
High speed switching
6.0kV 200mA HIGH VOLTAGE DIODE
|
getedz electronics
GETAI ELECTRONICS DEVIC...
|
