| PART |
Description |
Maker |
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| MK32VT1672A-8YC MK32VT1672A |
16,777,216 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| MSC23S4641E-8BS16 |
4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI electronic components
OKI electronic componets
|
| IDT74SSTU32864BFG IDT74SSTU32864 IDT74SSTU32864ABF |
1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MK32VT1672A-8YC |
16777216字72位同步动态随机存储器模块BANK）（1,600字72位同步动态内存模块）
16777216 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(16M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| IDT74SSTV16857 IDT74SSTV16857PA IDT74SSTV16857PAG |
14-BIT REGISTERED BUFFER WITH SSTL I/O
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| SSTVN16857 SSTVN16857MTD SSTVN16857MTDX |
14-Bit Register with SSTL-2 Compatible I/O (Preliminary)
|
Fairchild Semiconductor
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| SSTV16857 SSTV16857MTD |
From old datasheet system
14-Bit Register with SSTL-2 Compatible I/O and Reset
|
Fairchild Semiconductor
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
