| PART |
Description |
Maker |
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55257DFL-55L TC55257DFL-55V TC55257DFL-70L TC552 |
32K X 8 STANDARD SRAM, 120 ns, PDSO28
MOS DIGITAL INTEGRATED CIRCUIT 马鞍山数字集成电
32,768 WORD-8 BIT STATIC RAM 32,768字，8位静态RAM
32,768-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| UPD23C32000A UPDA23C32000 |
MOS IC
MOS INTEGRATED CIRCUIT
|
NEC
|
| UPD121A10T1F-E2-AT UPD121A10 UPD121A10T1F-E1-AT UP |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD72873 UPD72873GC-YEB |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD166020T1F-E1-AY |
MOS INTEGRATED CIRCUIT
|
Renesas Electronics Corporation
|
| UPD720110 UPD720110AGC-8EA |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD77113AF1-XXX-CN1 UPD77114 UPD77113A UPD77114GC- |
MOS INTEGRATED CIRCUIT
|
http://
NEC Corp.
|
