PART |
Description |
Maker |
CYNB25-400 CYNA25-400 CYNA25-1000 |
SCR 25A 400V NON-ISOLAT TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 25A 400V ISOLATED TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 1000V 25A ISOLATED TO220AB 25 A, 1000 V, SCR, TO-220AB
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Crydom, Inc. CRYDOM CORP
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APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology Ltd.
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25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package 1400V 40A Phase Control SCR in a TO-208AA (TO-48) package 1200V 25A Phase Control SCR in a TO-208AA (TO-48) package 1000V 25A Phase Control SCR in a TO-208AA (TO-48) package 100V 25A Phase Control SCR in a TO-208AA (TO-48) package 600V 25A Phase Control SCR in a TO-208AA (TO-48) package 400V 25A Phase Control SCR in a TO-208AA (TO-48) package 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier] International Rectifier, Corp.
|
APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
M68732L 68732L |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦,调频便携式收音机 From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|