| PART |
Description |
Maker |
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5175 E001059 |
NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) npn型外延型HIHG电流开关应用）
HIGH CURRENT SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK1489 E001352 |
From old datasheet system
N CHANNEL MOS TYPE (CHOPPER REGULATOR, HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)
CHOPPER REGULATOR APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SB1018A EE08307 |
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| 2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
