PART |
Description |
Maker |
HN462732 |
4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY 4096 word x 8 Bit UV Erasable and EPROM
|
Hitachi Semiconductor
|
HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词?8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
R1EX25002ASA00A-15 |
Serial Peripheral Interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
UPD8355 UPD8355-2 UPD8355A |
16384-BIT ROM WITH I/O PORTS / 16384-BIT EPROM WITH I/O PORTS
|
NEC
|