| PART |
Description |
Maker |
| M54580P |
7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M54562P M54562P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| M54563WP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54563FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
| M54562WP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54562P12 M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 8个单00mA的源类型达林顿晶体管阵列钳位二极
|
Mitsubishi Electric Semiconductor
|
| AD5520 EVAL-AD5520EB AD5520JST AD5520JST-REEL |
Per Pin Parametric Measurement Unit/Source Measure Unit
Per-pin Parametric Measurement Unit / Source Measure Unit
|
Analog Devices, Inc.
|
| R1122N R1122N201A R1122N201A-TL R1122N201A-TR R112 |
Low noise 150mA LDO regulator IC. Output voltage 1.9V. Active H type. Standard taping type TR.
Low noise 150mA LDO regulator IC. Output voltage 2.8V. Active H type. Standard taping type TR.
Low noise 150mA LDO regulator IC. Output voltage 2.8V. Active H type. Taping type TL.
Low noise 150mA LDO regulator IC. Output voltage 2.8V. Active L type. Standard taping type TR.
Low noise 150mA LDO regulator IC. Output voltage 2.8V. Active L type. Taping type TL.
Low noise 150mA LDO regulator IC. Output voltage 1.9V. Active H type. Taping type TL.
|
RICOH[RICOH electronics devices division]
|
| BP5225 |
DC/DC converter 5V/150mA output type
|
Rohm
|
| AME8750 |
Low-Dropout 150mA / 150mA Dual CMOS Regulator
|
AME
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
