| PART |
Description |
Maker |
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| UPC2791TB |
(UPC2791TB / UPC2792TB) SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL
|
| 2SC5606-T1 2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| UPA843TC UPA843TC-T1 |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
NEC Corp.
|
| 2SC5011 2SC5011-T1 2SC5011-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
| NE202930-T1-YFB-A NE202930-15 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SUPER MINIMOLD PACKAGE-3
Silicon NPN Epitaxial High Frequency Transistor
|
Integrated Device Technology, Inc.
Renesas Electronics Corporation
|
| UPC2771TB |
SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
|
CEL
|
| UPC2748TB-E3-A UPC2747TB UPC2747TB-E3-A UPC2748TB |
3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPA801 UPA801T UPA801TC UPA801TC-T1 PA801TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NPN Epitaxial Transisitor(NPN外延晶体
|
NEC[NEC]
NEC Corp.
|
