| PART |
Description |
Maker |
| 2SB1578 2SB1578GB2 2SB1578GB1 2SB1578-GB3 |
5 A, 60 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC, Corp.
Panasonic Semiconductor
|
| 2SA1723 |
High-Frequency Amp, Medium-Power Amp Applications
High-Frequency Amp/ Medium-Power Amp Applications
|
Sanyo Semicon Device
|
| MMBT2222 MMBT2222A |
NPN Silicon Epitaxial Planar Medium Power Transistor
|
SEMTECH ELECTRONICS LTD.
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NCP1027P100G |
High−Voltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power
|
ON SEMICONDUCTOR
|
| BD233 BD237 BD235 BD233STU BD235STU BD237STU |
Medium Power Linear and Switching Applications
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC3419 E000841 |
From old datasheet system
NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BD676A BD682 BD678A BD680A BD676AS BD678AS |
PNP Epitaxial Silicon Transistor
Medium Power Linear and Switching Applications
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4781 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| NTE315 |
Silicon NPN Transistor, Medium Power Amp
|
NTE[NTE Electronics]
|
| NE5520279A-T1-A |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET 3.2五，2瓦报
|
California Eastern Laboratories, Inc.
|
| 30S10 30S2 30S3 30S5 30S6 30S8 |
3 Amp Medium Power Silicon Rectifier 50 - 1000 Volts
|
Micro Commercial Components
|
