| PART |
Description |
Maker |
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| 2SK2885 2SK2882 |
SILICON N-CHANNEL MOS TYPE
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
| TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1870B UPA1870BGR-9JG UPA1870BGR-9JG-E1 UPA1870B |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
NEC Corp.
|
