| PART |
Description |
Maker |
| IRF240-243 IRF241 IRF242 IRF243 IRF641 IRF642 IRF6 |
N-Channel Power MOSFETs, 18A, 150-200V N沟道功率MOSFET8A条，15000
N-Channel Power MOSFETs/ 18A/ 150-200V
N-Channel Power MOSFETs 18A 150-200V
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BU406 BU407 |
POWER TRANSISTORS(7A/150-200V/60W)
POWER TRANSISTORS(7A,150-200V,60W)
|
MOSPEC[Mospec Semiconductor]
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRF9630S IRF9630STRL IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-6.5A)
|
IRF[International Rectifier]
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| IRFD9220 |
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
IRF[International Rectifier]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| S8JX-G10012 S8JX-G10012D S8JX-G05005 S8JX-G05005D |
Switch Mode Power Supply
Wide Variety of Output Voltage Variations: 48 V for 15 to 150 W, and 5 or 12 V for 150 W
|
Omron Electronics LLC
|
