| PART |
Description |
Maker |
| STP7NB40FP STP7NB40 5584 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics
意法半导
STMicroelectronics
|
| ARF448B ARF448A ARF448 |
N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 |
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| 2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor
List of Unclassifed Manufacturers
|
| MGSF3455XT1 MGSF3455XT1_D ON1912 ON1911 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
P-CHANNEL ENHANCEMENT?ODE
From old datasheet system
|
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
