PART |
Description |
Maker |
2SC1722 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV
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List of Unclassifed Manufacturers ETC[ETC]
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KSC2609A KSA2690 KSC2690Y KSC2690A KSC2690 KSC2690 |
NPN Epitaxial Silicon Transistor Audio Frequency High Frequency Power Amplifier
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FAIRCHILD[Fairchild Semiconductor] COSMO Electronics Corporation Fairchild Semiconductor Corporation
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KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
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SAMSUNG[Samsung semiconductor]
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FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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MAX7384B MAX7384CRVT MAX7384CRVB MAX7384CMUK MAX73 |
11.0592 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 12 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output Replaced by SN54197 : 50/30/100-Mhz Presettable Decade OR Binary Counters/Latches 14-CDIP -55 to 125 硅振荡器的低功耗高频开关和复位输出 14.7456 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 10 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
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Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor
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UMA1014 UMA1014_3 UMA1014T-T |
PLL FREQUENCY SYNTHESIZER, 1100 MHz, PDSO16 From old datasheet system Low-power frequency synthesizer for mobile radio communications
|
NXP SEMICONDUCTORS Philips
|
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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2SB1101 2SB1102 |
(2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602
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Hitachi Semiconductor
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2SA1298 E000497 |
TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER/ SWITCHING APPLICATIONS) TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) LOW FREQUENCY POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS From old datasheet system
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TOSHIBA[Toshiba Semiconductor]
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SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
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BOURNS INC
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2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)
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Toshiba Semiconductor
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