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MTP4N80ED - TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

MTP4N80ED_186086.PDF Datasheet

 
Part No. MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

File Size 155.71K  /  8 Page  

Maker


ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.



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Part: MTP4N50E
Maker: ON
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.92
  100: $0.88
1000: $0.83

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 Full text search : TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆


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