| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5703 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SC5713 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA205606 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4681 |
NPN EPITAXIAL TYPE (STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA1300 2SA130007 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116007 2SA1160 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA135707 2SA1357 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
