| PART |
Description |
Maker |
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GT40T101 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK153006 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
Toshiba Semiconductor
|
| RJM0603JSC RJM0603JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| 2SK1118 |
N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) 频道马鞍山类型（高速，大电流的DC - DC转换器，继电器驱动器和电机潜水员
N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)
N Channel MOS Type(for High Speed High Current DC-DC Converter Relay Drive and Motor Diver)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
|
TOSHIBA
|
