| PART |
Description |
Maker |
| ULS-2812H-883 ULS-2802H-883 ULS-2012H-883 ULS-2022 |
N-CHANNEL 100V - O.33 Ohm - 2A SOT-223 STRIPFET POWER MOSFET
N-channel 500V - 2.5O - 4A - TO-220 PowerMESH™ II MOSFET
Single exclusive OR gate
Single bus buffer (3-state)
SINGLE 8 CHANNEL ANALOG MULTIPLEXERS-DEMULTIPLEXERS
Single 2-input OR gate
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
GPS PROCESSOR 八进制外设驱
Quad 2-input nand gate 2输入与非
Single inverter 单反相器
N-channel 100V - 0.32 O - 5A - TO-251/TO-252 STripFET™ Power MOSFET
|
Allegro MicroSystems, Inc.
Panasonic, Corp.
|
| MMSF7N03ZR2 |
Single N-Channel Monolithic Zener ESD Protected Gate
7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET MINIATURE, CASE 751-07, SOP-8
|
ON Semiconductor
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| 1EDI20N12AF 1EDI20N12AF-15 |
Single Channel MOSFET and GaN HEMT Gate Driver IC
|
Infineon Technologies A...
|
| 2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2496 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NLU1G86AMX1TCG NLU1G86MUTCG NLU1G86CMX1TCG NLU1G86 |
Single 2-Input Exclusive OR Gate
Single 2 Input Exclusive OR Gate 1G SERIES, 2-INPUT XOR GATE, DSO6
|
ON Semiconductor
|
| 74LX1G00 8487 74LX1G00STR 74LX1G00CTR |
LOW VOLTAGE SINGLE 2-INPUT NAND GATE
From old datasheet system
SINGLE 2-INPUT NAND GATE 单两输入与非
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
