PART |
Description |
Maker |
2SB1284 |
Darlington Transistor(-10A PNP)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
PJP110ACZ |
20V; 10A; PNP epitaxial silicon darlington transistor
|
PROMAX-JOHNTON
|
MPSA62 MPSA64 MPSA63 ON2343 |
Darlington Transistor 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA From old datasheet system For Specifications, See MPSA05, MPSA06 Data Darlington Transistors(PNP Silicon)
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
|
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
|
Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
|
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
2SB601 2SB601-Z 2SB601-S 2SB601L 2SB601M 2SB601K |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon transistor
|
NEC Corp. NEC[NEC]
|
SDH03 |
PNP NPN Darlington H-bridge PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥)) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
2SA1834R 2SB1516P 2SB1516Q 2SB1516N 2SC5119 2SD211 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-252VAR TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-252VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五(巴西)总裁|5A一(c)|52VAR TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252VAR 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 4A条一(c)|52VAR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁|甲一(c)|52VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 6A I(C) | TO-252VAR 晶体管|晶体管|进步党| 100V的五(巴西)总裁| 6A条一(c)|52VAR TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252VAR
|
Semtech, Corp. Maxim Integrated Products Rochester Electronics, LLC Amphenol, Corp.
|
2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五(巴西)总裁| 10A条一(c)|的SOT - 186 10 A, 100 V, PNP, Si, POWER TRANSISTOR PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
2SB1008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126 Low Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor
|
Rohm CO.,LTD. ROHM Electronics
|