PART |
Description |
Maker |
2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC3651 |
High-hFE/ Low-Frequency General-Purpose Amp Applications High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC4705 |
Low-Frequency General-Purpose Amp/ Applications(High hFE) Low-Frequency General-Purpose Amp, Applications(High hFE)
|
Sanyo Semicon Device
|
2SC3650 |
High-hFE/ Low-Frequency General-Purpose Amp Applications High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC3807 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3070 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification
|
Isahaya Electronics Corporation
|
2SC3355 2SC3355-T |
For amplify low noise and high frequency HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|