| PART |
Description |
Maker |
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD965 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL
SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| 2SC4989 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3404 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2166 |
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation
|
| 2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
