| PART |
Description |
Maker |
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM |
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
| 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
| MRF9822T1 |
HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT
|
Motorola, Inc
|
| MRFG35010 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35002N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35005NT1 MRFG35005MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
|
| T1P3005028-SP |
50 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| HM69SPDT312 HS69SPDT312 |
Single Pole Double Throw GaAs PHEMT Switch 0.1 6 GHz 单刀双掷开关GaAs PHEMT.16千兆
Single Pole Double Throw GaAs PHEMT Switch 0.1 ?6 GHz
Single Pole Double Throw GaAs PHEMT Switch 0.1 - 6 GHz
|
Sumitomo Electric Industries, Ltd.
Eudyna Devices Inc
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| FPD1000V |
1W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
