| PART |
Description |
Maker |
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| UPD431008LLE-A17 UPD431008LLE-A20 |
x8 SRAM
1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT 1m-bit互补128k-word8位快速静态存储器
|
NEC TOKIN, Corp.
|
| MCM63F733A MCM63F733ATQ10 MCM63F733ATQ11 MCM63F733 |
128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc.
|
| MCM69P736 MCM69P736ZP4 MCM69P736ZP4R |
128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| MCM69P737 MCM69P737TQ3.5 MCM69P737TQ3.5R MCM69P737 |
128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UPD431000A-XXX UPD431000AGZ-85L-KJH UPD431000ACZ-X |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
128K X 8 STANDARD SRAM, 85 ns, PDSO32
|
NEC
|
| UPD4443362 UPD4443362GF-A75 |
4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
NEC[NEC]
|
| KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM63Z818TQ100R MCM63Z818TQ100 MCM63Z818TQ133R MCM |
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33- |
128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns
|
CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
|
