Part Number Hot Search : 
BS903 T5500 IM100 S10C50CE 18710 PA2010 00GA1 PST7030M
Product Description
Full Text Search

PF01411 - MOS FET Power Amplifier Module for E-GSM Handy Phone

PF01411_216086.PDF Datasheet

 
Part No. PF01411 PF01411A
Description MOS FET Power Amplifier Module for E-GSM Handy Phone

File Size 25.05K  /  4 Page  

Maker


HITACHI[Hitachi Semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: PF01411A
Maker:
Pack:
Stock: Reserved
Unit price for :
    50: $2.00
  100: $1.90
1000: $1.80

Email: oulindz@gmail.com

Contact us

Homepage http://www.renesas.com/eng/
Download [ ]
[ PF01411 PF01411A Datasheet PDF Downlaod from Datasheet.HK ]
[PF01411 PF01411A Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for PF01411 ]

[ Price & Availability of PF01411 by FindChips.com ]

 Full text search : MOS FET Power Amplifier Module for E-GSM Handy Phone
 Product Description search : MOS FET Power Amplifier Module for E-GSM Handy Phone


 Related Part Number
PART Description Maker
PF08122B MOS FET Power Amplifier Module
Renesas
PF1010A MOS FET Power Amplifier Module for P/C LAN
HITACHI[Hitachi Semiconductor]
PF0031 MOS FET Power Amplifier Module for Mobile Phone
HITACHI[Hitachi Semiconductor]
M68732H 68732H M68732 RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
M68757H 68757H From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
M68739M 68739M From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
M68732UL 68732UL RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 380-400MHz, 7W, FM PORTABLE RADIO
From old datasheet system
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
MP4403 TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
Toshiba Semiconductor
 
 Related keyword From Full Text Search System
PF01411 connector PF01411 maxim PF01411 MARKING PF01411 stock PF01411 filetype:pdf
PF01411 ic查找网站 PF01411 ultra PF01411 applications PF01411 poliester PF01411 external rom
 

 

Price & Availability of PF01411

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.26940703392029