| PART |
Description |
Maker |
| 2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
| C4D10120D |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
| FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五（DRM）的|00VAR75
THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五（DRM）的|00AE
|
Dynex Semiconductor, Ltd.
Fairchild Semiconductor, Corp.
|
| FB514 FB612 FB614 FB522 FB524 FB523 |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
|
Square D by Schneider Electric
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| CM600HA-24H |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
|
Mitsubishi
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
