PART |
Description |
Maker |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
TRSYS
|
IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
L2711 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SR703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LX521 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|