PART |
Description |
Maker |
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44 From old datasheet system GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道,双循环取消选择静态RAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100 256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
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Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc
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71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
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27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
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Macronix International Co., Ltd.
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IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位) Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28 Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位) CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28 Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28 CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28 Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70 Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85 Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75 CMOS Static RAM 256k ( 32k X 8-bit )
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INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Technolog...
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UPD43256B UPD43256B-A UPD43256B-B UPD43256BCZ-70L |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
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NEC[NEC]
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UPD43256BGU-B10-A UPD43256BGU-B12-A UPD43256B06 UP |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
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NEC
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UPD43256BGW-A10-9JL UPD43256BGW-A10-9KL UPD43256BG |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K位CMOS静态RAM 32K的词8
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http:// NEC, Corp. NEC Corp.
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UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC http://
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PDM41258LA7SO PDM41258SA7SOTR |
256K static RAM 64K x 4-bit
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PARADIGM
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