| PART |
Description |
Maker |
| MSM53V1655F |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| CY62167G18-55BVXIES CY62167G30-45BVXIES CY62167GE3 |
16-Mbit (1 M words 16 bit / 2 M words 8 bit) Static RAM with Error-Correcting Code (ECC)
|
Cypress
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| HD404342RFP HD404344RFP HD404C342RFP HD404C344RFP |
ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer
ROM: 4.096 words; RAM: 256; ; 4-bit microcomputer
ROM: 1.024 words; RAM: 256; ; 4-bit microcomputer
|
Hitachi Semiconductor
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| MSM538052E |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM
From old datasheet system
|
OKI
|
| TC554001 TC554001AF TC554001AF-10 TC554001AF-10L T |
LJT 66C 66#22D PIN PLUG 524228字8位静态RAM
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:32; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:19-32 RoHS Compliant: No
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LC36256AL-85W LC36256AL-70W |
256 K (32768 words x 8 bit) SRAM
|
SANYO
|
| GM71S17403C-5 GM71S17403C-7 GM71S17403CL-7 GM71S17 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
| GM71C4400ET-80 GM71C4400E GM71C4400E-60 GM71C4400E |
x4 Fast Page Mode DRAM
1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
|
