| PART |
Description |
Maker |
| BC860CL BC860AL |
Leaded Cartridge Fuse; Current Rating:700mA; Voltage Rating:125V; Fuse Terminals:Radial Lead; Fuse Type:Fast Acting; Voltage Rating:125V; Body Material:Plastic Cap; Diameter:6.35mm; Leaded Process Compatible:Yes; Length:8.89mm RoHS Compliant: Yes
Automotive Fuse; Current Rating:15A; Voltage Rating:32V; Fuse Type:Fast Acting; Fuse Terminals:Blade; Length:18.54mm; Series:257; Fuse Size/Group:18.54 x 19.05 x 5.08mm 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Ironwood Electronics
|
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| IRFBE30 |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co.,...
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| GSMBD2004 |
S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
|
E-Tech Electronics LTD
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
| RS-25 |
25W Single Output Swi tching Power Supply
|
Mean Well
|
| FWH-500A COOPERINDUSTRIES-FWH-225A |
Semiconductor Fuse; Current Rating:500A; Voltage Rating:500V; Fuse Size/Group:1.5 x 2.09 "; Fuse Type:Fast Acting; Fuse Terminals:Blade; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:FWH RoHS Compliant: No
|
COOPER INDUSTRIES
|
