| PART |
Description |
Maker |
| GN01081B |
GaAs IC with built-in ferroelectric RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Black Box, Corp.
Panasonic Semiconductor
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| UN911CJ UN911BJ UN9118 UNR9118 UN9110 UNR9110 UN91 |
UNR911X Series (UN911X Series) - PNP Transistor with built-in Resistor
3 to 5.5 V, low power, up to 400 kbps RS-232 drivers and receivers
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
| CMY91 Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) 砷化镓微波单片集成电路（砷化镓混频器，集成中频放大器的移动通信
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| FCI-H125G-GAAS-100 FCI-H250G-GAAS-100 |
(FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes
|
Laser Components
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
