| PART |
Description |
Maker |
| GN02035B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| UN8231A UN8231 UNR8231A UNR8231 0706 UNR8231/UNR82 |
UNR8231/UNR8231A (UN8231/UN8231A) - NPN Transistor with built-in Resistor
From old datasheet system
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| UN4123 UNR4123 UN4121/4122/4123/4124/412X/412Y |
UN4121/4122/4123/4124/412X/412Y - PNP Transistor with built-in Resistor
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| UN2226 0687 UNR2226UN2226 |
UNR2226 (UN2226) - NPN Transistor with built-in Resistor
From old datasheet system
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| STA475A06 STA475A |
Sink Driver Array With Built-in Avalanche Diode
NPN Darlington With built-in avalanche diode
|
Sanken electric
|
| SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
