PART |
Description |
Maker |
SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROUD, PRIVACY; RoHS Compliant: Yes
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IRF[International Rectifier]
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IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A) Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.28ohm,身份证\u003d 7.9A
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IRF[International Rectifier] International Rectifier, Corp.
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IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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International Rectifier, Corp. IRF[International Rectifier]
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IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A) Hexfet? Power MOSFET
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IRF[International Rectifier]
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IRFU320 IRFR320 IRFR320PBF IRFR320TR IRFR320TRL IR |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Power MOSFET(Vdss=400V Rds(on)=1.8ohm Id=3.1A) Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A) 400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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IRF[International Rectifier]
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IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
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IRF[International Rectifier]
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IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
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IRF[International Rectifier]
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IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A) Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
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IRF[International Rectifier] http://
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IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
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IRF[International Rectifier]
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IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
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IRF[International Rectifier]
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IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
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IRF[International Rectifier]
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IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
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TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
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