| PART |
Description |
Maker |
| IPS521 IPS521S |
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH 充分保护高压侧功率MOSFET开
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
High Voltage Medium Power NPN Transistor In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(高电压、中等功率、高可靠性、NPN晶体管（陶瓷表贴封装
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IR2113STR IR2110 IR2110S IR2110SPBF IR2113-1 IR211 |
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 16-lead SOIC package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package in a 14-pin DIP -1 lead package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package in a 16-pin DIP -2 leads package
|
International Rectifier
|
| APT20M18LVR APT20M18B2VR |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| IR2112S IR2112-2 |
High and Low Side Driver. Shutdown Input. High Creepage Package in a 16-pin DIP -2 leads package
|
International Rectifier
|
| IDT7024L55G IDT7024S35G IDT7024S55GB IDT7024S35GB |
HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
75V/65A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail
400V N-Channel MOSFET, FRFET; Package: TT3P0; No of Pins: 3; Container: Rail
60V/60A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail
600V N-Channel SuperFET; Package: TO-220F; No of Pins: 3; Container: Rail
50A, Smart Power Module for Single-phase SR Motor Drive; Package: SPM27-DA; No of Pins: 27; Container: Rail
60V/73A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail
30V/80A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail
GIGATRUE 550 CAT PATCH CBL NO BOOT 10FT YW 25 PK
Smart Power Module (SPM); Package: SPM27-BA; No of Pins: 27; Container: Rail
Smart Power Module for SRM; Package: SPM20-BC; No of Pins: 20; Container: Rail
500V N-Channel MOSFET, UniFET; Package: TT3P0; No of Pins: 3; Container: Rail 4K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
POWER QUICC I HIP6W
|
Integrated Device Techn...
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IPS5551T |
Intelligent Power Switch 1 Channel High Side Driver in a Super 220 (TO-273AA) Package
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
IRF[International Rectifier]
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| ENC270D-05B ENC390D-05B ENC470D-05B ENC560D-05B EN |
SMBus Accelerator (SMA); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
µP Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On Reset; Temperature Range: -40°C to 85°C; Package: 8-PDIP
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
5 Ld Voltage Supervisors with Adjustable Power-On Reset, Dual Voltage Monitoring or Watchdog Timer Capability; Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
STD MOV 性病检验手
|
TE Connectivity, Ltd.
ZF Electronics, Corp.
|
| ICE1PD265G |
Integrated Power ICs - PFC IC/CoolMOS one-package combination
Power Factor Controller Cool- MOS: BoostSET IC for High Power Factor and low THD
|
INFINEON[Infineon Technologies AG]
|
