| PART |
Description |
Maker |
| M5M44265CJ-7S M5M44265CTP-6S M5M44265CTP-5S |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 江户（超页模式）4194304位（262144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| UPD424190A |
262144 x 18-Bit Dynamic CMOS RAM
|
NEC Electronics
|
| M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
| M5M5V416CWG-85HI |
4194304-bit (262144-word by 16-bit) CMOS static RAM
|
Mitsubishi Electric Corporation
|
| M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M5Y416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
