| PART |
Description |
Maker |
| SKY74963 SKY74963-32 SKY74963-23 |
RF Transceiver w/Powr Ramping Controller and Integrated Cryst Osc for Multi-Band GSM/GPRS/EDGE Apps
SKY74963: RF Transceiver With Power Ramping Controller and Integrated Crystal Oscillator for Multi-Band GSM, GPRS, and EDGE Applications
|
SKYWORKS[Skyworks Solutions Inc.]
|
| PCF5077T |
Power amplifier controller for GSM and PCN systems
|
PHILIPS[Philips Semiconductors]
|
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| PCF5079 PCF5079HK PCF5079T |
Dual-band power amplifier controller for GSM, PCN and DCS
|
NXP Semiconductors
|
| MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| SKY12143-315 |
HIP3 Variable Attenuator for AMPS and GSM Base Stations
HIP3⑩ Variable Attenuator for AMPS and GSM Base Stations
|
Skyworks Solutions Inc.
|
| SKY77548 |
Tx-Rx iPAC垄芒 Front-End Module for Dual-Band GSM / GPRS
Tx-Rx iPAC Front-End Module for Dual-Band GSM / GPRS
|
Skyworks Solutions Inc.
|
| PD60-0001-02S |
High Power2 Channel Transmit Combiner for AMPS/GSM/IS-95 MHz
High Power锛?2 Channel Transmit Combiner for AMPS/GSM/IS-95 MHz
|
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