| PART |
Description |
Maker |
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| CHT5824XPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. ...
Chenmko Enterprise Co. Ltd.
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BDV65B BDV65A BDV65C |
Silicon NPN Power Transistors
Silicon NPN Darlington Power Transistor
|
Inchange Semiconductor Company Limited
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| MRF20060RS |
NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) L BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(NPN纭??棰?????浣??)
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| 2SC4892 |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SD2469A 2SD2469 |
Silicon NPN epitaxial planar type(For power switching) 7 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| BUV27 BUV27G |
Bipolar T0220 NPN 8A 120V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 12 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
NPN Silicon Power Transistor
|
Rectron Semiconductor
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
