| PART |
Description |
Maker |
| NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
| NE5520279A-T1 NE5520279A |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC Corp.
NEC[NEC]
|
| UPG2214TB UPG2214TB-E4-A |
NECs W LOW VOLTAGE L, S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPG2015TBNBSP UPG2015TB UPG2015TB-E3 |
NECs 1W SINGLE CONTROL L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| NE52418 NE52418-T1-A NE52418-A |
NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
|
California Eastern Laboratories
Duracell
California Eastern Labs
|
| UPG2012TB UPG2012TB-E3 |
From old datasheet system
NECs 1/4W SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPD5710TK UPD5710TK-E2-A |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| TLP559 |
Photocoupler GaA .As Ired & Photo IC
|
TOSHIBA
|
| TLP2098 |
PHOTOCOUPLER GaA?As IRED & PHOTO-IC
|
Toshiba Semiconductor
|
