| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package 安捷伦亚欧信托基 501P8高线性增强模式伪HEMT器件x2平方毫米的LPCC封装
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Avago Technologies, Ltd.
Agilent Technologies, Inc.
Agilent(Hewlett-Packard)
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| NTE2375 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2389 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
MOSFET N-Ch / Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2924 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2921 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
