PART |
Description |
Maker |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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SemeLAB SEME-LAB[Seme LAB]
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CD22859 CD22859E |
Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator
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INTERSIL[Intersil Corporation] HARRIS
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EM91410 EM91410A EM91410AP EM91410B EM91410BP EM91 |
TONE/PULSE SWITCHABLE DIALER WITH LCD INTERFACE AND DUAL-TONE MELODY GENERATOR
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EMC[ELAN Microelectronics Corp]
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SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
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Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
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IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
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TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
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IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
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TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
EM91415AP EM91415A/B/C/D |
TONE/PULSE SWITCHABLE DIALER WITH LCD INTERFACE AND DUAL-TONE MELODY GENERATOR Telephone Dialer Multi-Function Dialer
|
ELAN Microelctronics Corp .
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EM91401A/B/C/D EM91401B EM91401A EM91401CP EM91401 |
TONE/PULSE SWITCHABLE DIALER WITH LCD INTERFACE AND DUAL-TONE MELODY GENERATOR Telephone Dialer Multi-Function Dialer
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ELAN Microelectronics C... ELAN Microelctronics Corp .
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EM57220 EM57212 EM57204 EM57240 EM57230 |
20 Seconds Single Chip Voice/Dual Tone Sound Effect Synthesizer(语音容量20秒的单片语音/双音调语音合成器) 12 Seconds Single Chip Voice/Dual Tone Sound Effect Synthesizer(璇??瀹归?12绉?????璇??/???璋???冲????) 4 Seconds Single Chip Voice/Dual Tone Sound Effect Synthesizer(璇??瀹归?4绉?????璇??/???璋???冲????) 40 Seconds Single Chip Voice/Dual Tone Sound Effect Synthesizer(璇??瀹归?40绉?????璇??/???璋???冲????) 30 Seconds Single Chip Voice/Dual Tone Sound Effect Synthesizer(璇??瀹归?30绉?????璇??/???璋???冲????)
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ELAN Microelctronics Corp .
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AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
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austriamicrosystems AG
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