PART |
Description |
Maker |
HYB39S64800BT HYB39S64400BT HYB39S64XXX0BTL |
64MBit Synchronous DRAM(64M4× 2M× 8)同步动态RAM) 64MBit Synchronous DRAM(64M4× 4M× 4)同步动态RAM) 64MBitSynchronous DRAM(64M位同步动态RAM(低功耗版))
|
SIEMENS AG
|
K4S641632E-TC75 K4S641632E K4S641632E-TC60 |
64Mbit SDRAM
|
Samsung semiconductor
|
K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd. Samsung Electronic
|
M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
M29KW064E90N1 |
64MBIT (4MBX16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASH MEMORY
|
ST Microelectronics
|
M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics 意法半导
|
YG962S6R |
SILICON DIODE IC, FLASH, X8, 64MBIT, 8MB, 3V, TSOP
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation Toshiba, Corp.
|
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
|
K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4 |
RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58 RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM5 |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型 DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|