| PART |
Description |
Maker |
| BF245A |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
|
ON SEMICONDUCTOR
|
| J309-TA |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
VISHAY SILICONIX
|
| 2N3819 2N3819-D |
JFET VHF/UHF Amplifier N-Channel - Depletion
JEET VHF/UHF Amplifier N-channel-Depletion
|
ONSEMI[ON Semiconductor]
|
| 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五（巴西）直| 15mA的我（直）|106
|
EPCOS AG
|
| 2N3823 MQ2N3821 |
N-CHANNEL J-FET DEPLETION MODE
N Channel JFET; Package: TO-72; VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
|
Microsemi Corporation
Microsemi, Corp.
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| LSK389-A-71 LSK389-C-71 |
ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
|
Linear Integrated System, Inc
LINEAR INTEGRATED SYSTEMS INC
|
| TCC0204-125 SD1463 2894 0204-125 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS
RF AND MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS
VHF/UHF APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| 2N5486G 2N605206 2N6071A06 2N6059 2N6052 2N6058 |
JFET VHF/UHF Amplifiers N?Channel - Depletion
Darlington Complementary Silicon Power Transistors
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ONSEMI[ON Semiconductor]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| X2N3922 2N3922 2N3921 |
MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
(2N3921 / 2N3922) MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER
From old datasheet system
|
Calogic LLC
CALOGIC[Calogic, LLC]
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
